SCHEMBL3481556

SCHEMBL3481556

CCO[SiH](OCC)c1ccccc1-c1ccc(C)cc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SYK P43405 1/20 0.38
SMN1; SMN2 Q16637 6/20 0.36
MEN1 O00255 5/20 0.36
KMT2A Q03164 5/20 0.36
MAPT P10636 5/20 0.36
ALDH1A1 P00352 5/20 0.36
HPGD P15428 5/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
KDM4E B2RXH2 2/20 0.36
ENPP3 O14638 1/20 0.36
ENPP1 P22413 1/20 0.36
GAA P10253 1/20 0.36
ATM Q13315 1/20 0.36
LMNA P02545 4/20 0.34
TDP1 Q9NUW8 2/20 0.34
MAPK1 P28482 1/20 0.34
ADORA3 P0DMS8 1/20 0.33
NPSR1 Q6W5P4 3/20 0.33
PKM P14618 2/20 0.33
HTT P42858 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481478 0.87 SYK (0.36) SYKSMN1; SMN2MEN1KMT2AMAPT
SCHEMBL3481948 0.80 SYK (0.37) SYKSMN1; SMN2MEN1KMT2AMAPT
SCHEMBL2961096 0.77 ALDH1A1 (0.33) ALDH1A1NPSR1TP53
SCHEMBL63206 0.74 ALDH1A1 (0.46) SMN1; SMN2MEN1KMT2AMAPTALDH1A1
SCHEMBL103756 0.74 TSHR (0.38) MAPTALDH1A1GAATDP1HTT
SCHEMBL3481561 0.72 CA12 (0.41) SMN1; SMN2ENPP3ENPP1GAAMAPK1
SCHEMBL3482594 0.72 MEN1 (0.37) SYKSMN1; SMN2MEN1KMT2AMAPT
SCHEMBL23282539 0.71 NPC1 (0.31) SMN1; SMN2MAPTALDH1A1GAAMAPK1
SCHEMBL15847959 0.71 PPARG (0.38) SMN1; SMN2MEN1KMT2AMAPTALDH1A1
Ether SCHEMBL1929108 0.71 LMNA (0.44) SYKSMN1; SMN2MEN1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed