SCHEMBL3481571

SCHEMBL3481571

CCC[SiH2]OCCC=Cc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 2/20 0.42
SIGMAR1 Q99720 2/20 0.41
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
PPARD Q03181 1/20 0.39
PPARA Q07869 1/20 0.39
HTR2A P28223 3/20 0.38
RELA Q04206 1/20 0.38
PAM P19021 1/20 0.36
RAB9A P51151 1/20 0.35
NAAA Q02083 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481551 0.91 SIGMAR1 (0.39) IDO1SIGMAR1MEN1KMT2APPARD
SCHEMBL3482528 0.91 IDO1 (0.40) IDO1SIGMAR1MEN1KMT2APPARD
SCHEMBL3482215 0.83 IDO1 (0.53) IDO1SIGMAR1MEN1KMT2APPARD
SCHEMBL3482239 0.83 RELA (0.38) IDO1SIGMAR1MEN1KMT2APPARD
SCHEMBL886957 0.80 RELA (0.43) IDO1SIGMAR1MEN1KMT2APPARD
SCHEMBL15543859 0.80 SIGMAR1 (0.45) IDO1SIGMAR1MEN1KMT2APPARD
Benzene SCHEMBL1226219 0.74 SIGMAR1 (0.53) IDO1SIGMAR1MEN1KMT2AHTR2A
Benzene SCHEMBL1226215 0.74 SIGMAR1 (0.53) IDO1SIGMAR1MEN1KMT2AHTR2A
SCHEMBL108128 0.74 SIGMAR1 (0.53) IDO1SIGMAR1MEN1KMT2AHTR2A
SCHEMBL78219 0.74 SIGMAR1 (0.53) IDO1SIGMAR1MEN1KMT2AHTR2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed