Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 2/20 | 0.40 |
| ▸ | RELA | Q04206 | 1/20 | 0.39 |
| ▸ | SIGMAR1 | Q99720 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.38 |
| ▸ | PPARD | Q03181 | 1/20 | 0.38 |
| ▸ | PPARA | Q07869 | 1/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | HTR2A | P28223 | 3/20 | 0.36 |
| ▸ | PAM | P19021 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482239 | 0.93 | RELA (0.38) | IDO1RELASIGMAR1MEN1KMT2A | |
| SCHEMBL3481571 | 0.91 | IDO1 (0.42) | IDO1RELASIGMAR1MEN1KMT2A | |
| SCHEMBL3481551 | 0.85 | SIGMAR1 (0.39) | IDO1RELASIGMAR1MEN1KMT2A | |
| SCHEMBL886957 | 0.81 | RELA (0.43) | IDO1RELASIGMAR1MEN1KMT2A | |
| SCHEMBL3482215 | 0.81 | IDO1 (0.53) | IDO1RELASIGMAR1MEN1KMT2A | |
| SCHEMBL15573543 | 0.76 | SIGMAR1 (0.50) | IDO1RELASIGMAR1HTR2APAM | |
| SCHEMBL22082 | 0.76 | SIGMAR1 (0.50) | IDO1RELASIGMAR1HTR2APAM | |
| SCHEMBL1295478 | 0.76 | SIGMAR1 (0.50) | IDO1RELASIGMAR1HTR2APAM | |
| SCHEMBL3482110 | 0.75 | IDO1 (0.47) | IDO1RELAMEN1KMT2AHTR2A | |
| SCHEMBL6289216 | 0.75 | SIGMAR1 (0.49) | IDO1SIGMAR1HTR2APAM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |