SCHEMBL3481587

SCHEMBL3481587

COc1ccc(C(C)C(C)(C)O[SiH3])cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.46
MAPK1 P28482 2/20 0.46
TDP1 Q9NUW8 2/20 0.46
TSHR P16473 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.46
CA1 P00915 3/20 0.42
CA2 P00918 3/20 0.42
CA7 P43166 2/20 0.42
CA9 Q16790 2/20 0.42
CA12 O43570 1/20 0.42
CA14 Q9ULX7 1/20 0.42
NPSR1 Q6W5P4 1/20 0.41
SLC2A1 P11166 1/20 0.39
ACHE P22303 2/20 0.39
CYP1A2 P05177 1/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2C19 P33261 1/20 0.38
MEN1 O00255 1/20 0.38
RAB9A P51151 1/20 0.38
KMT2A Q03164 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481706 0.80 CHRNA7 (0.35) TDP1TSHRACHE
SCHEMBL10139335 0.79 MAPK1 (0.52) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL12766982 0.79 MAPK1 (0.52) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL10139336 0.79 MAPK1 (0.52) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL8954028 0.78 ALDH1A1 (0.34) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL704259 0.78 SLC6A4 (0.41) ALDH1A1MAPK1L3MBTL1CYP2D6SLC6A4
SCHEMBL6814333 0.74 MAPK1 (0.50) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL8553662 0.72 ALDH1A1 (0.44) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL29058810 0.71 CA1 (0.50) ALDH1A1MAPK1TDP1TSHRL3MBTL1
SCHEMBL18609431 0.70 NPSR1 (0.46) ALDH1A1MAPK1TDP1TSHRL3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed