SCHEMBL3481598

SCHEMBL3481598

CCCC[Si](CC)(OC)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.35
TSHR P16473 1/20 0.33
PCSK9 Q8NBP7 1/20 0.32
MPO P05164 2/20 0.31
NAAA Q02083 1/20 0.31
AR P10275 1/20 0.31
CYP1A2 P05177 2/20 0.31
CYP2C9 P11712 2/20 0.31
CYP2C19 P33261 2/20 0.31
PTGS2 P35354 1/20 0.31
CYP2D6 P10635 1/20 0.30
CYP19A1 P11511 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706929 0.92 LTA4H (0.37) LTA4HTSHRPCSK9MPONAAA
SCHEMBL3482054 0.89 LTA4H (0.35) LTA4HTSHRPCSK9MPONAAA
SCHEMBL3482435 0.89 TP53 (0.30)
SCHEMBL534972 0.84 CA4 (0.35) LTA4HTSHRCYP1A2CYP2C19
SCHEMBL3481833 0.84 LTA4H (0.34) LTA4HTSHRPCSK9MPONAAA
SCHEMBL3482212 0.82 LTA4H (0.37) LTA4HTSHRCYP1A2CYP2C9CYP2C19
SCHEMBL706458 0.82 AR (0.39) ARCYP2D6
SCHEMBL703241 0.80 TP53 (0.32) LTA4HTSHR
SCHEMBL5858528 0.79 LTA4H (0.36) LTA4HTSHRPCSK9NAAAAR
SCHEMBL705821 0.79 LTA4H (0.36) LTA4HTSHRPCSK9MPONAAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed