SCHEMBL3481833

SCHEMBL3481833

CCCC[Si](CC)(OCC)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.34
TSHR P16473 1/20 0.32
PTGS2 P35354 2/20 0.31
PCSK9 Q8NBP7 1/20 0.31
ABCB1 P08183 1/20 0.31
MPO P05164 1/20 0.30
ALDH1A1 P00352 1/20 0.30
MAPT P10636 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
NAAA Q02083 1/20 0.30
AR P10275 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C9 P11712 1/20 0.30
CYP2C19 P33261 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705821 0.93 LTA4H (0.36) LTA4HTSHRPTGS2PCSK9ABCB1
SCHEMBL3481654 0.89 LTA4H (0.34) LTA4HTSHRPTGS2PCSK9ABCB1
SCHEMBL3481868 0.89 TSHR (0.31) LTA4HTSHR
SCHEMBL3482212 0.88 LTA4H (0.37) LTA4HTSHRALDH1A1MAPTCYP1A2
SCHEMBL533990 0.85 LTA4H (0.34) LTA4HTSHRALDH1A1NPSR1
SCHEMBL3481598 0.84 LTA4H (0.35) LTA4HTSHRPTGS2PCSK9MPO
SCHEMBL712784 0.83 AR (0.38) AR
SCHEMBL707030 0.81 TSHR (0.33) LTA4HTSHRALDH1A1
SCHEMBL708788 0.80 LTA4H (0.39) LTA4HTSHRALDH1A1MAPTCYP1A2
SCHEMBL702995 0.80 LTA4H (0.43) LTA4HTSHRABCB1ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed