SCHEMBL3482054

SCHEMBL3482054

CCCC[Si](CCC)(OC)c1ccccc1

nearest known ligand 0.36

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.35
KCNH3 Q9ULD8 1/20 0.33
TSHR P16473 2/20 0.33
PCSK9 Q8NBP7 1/20 0.32
MPO P05164 2/20 0.31
NAAA Q02083 1/20 0.31
AR P10275 1/20 0.31
CYP1A2 P05177 2/20 0.31
CYP2C9 P11712 2/20 0.31
CYP2C19 P33261 2/20 0.31
PTGS2 P35354 1/20 0.31
MEN1 O00255 1/20 0.31
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31
GLA P06280 1/20 0.31
POLB P06746 1/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31
HPGD P15428 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706929 0.96 LTA4H (0.37) LTA4HTSHRPCSK9MPONAAA
SCHEMBL703241 0.92 TP53 (0.32) LTA4HTSHRMEN1ALDH1A1LMNA
SCHEMBL3481598 0.89 LTA4H (0.35) LTA4HTSHRPCSK9MPONAAA
SCHEMBL706458 0.86 AR (0.39) ARLMNACYP2D6
SCHEMBL3482435 0.85 TP53 (0.30)
SCHEMBL3481654 0.84 LTA4H (0.34) LTA4HKCNH3TSHRPCSK9MPO
SCHEMBL3481952 0.82 LTA4H (0.37) LTA4HKCNH3TSHRCYP1A2CYP2C9
SCHEMBL704514 0.82 ESR1 (0.35)
SCHEMBL18107989 0.79 LTA4H (0.36) LTA4HKCNH3TSHRPCSK9MPO
SCHEMBL5858528 0.79 LTA4H (0.36) LTA4HTSHRPCSK9NAAAAR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed