SCHEMBL3481612

SCHEMBL3481612

CCCc1ccccc1[SiH](O)[SiH3]

nearest known ligand 0.37

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.35
HTR1A P08908 1/20 0.34
PRKCI P41743 1/20 0.33
DAO P14920 1/20 0.33
ALOX5 P09917 1/20 0.32
PTGS2 P35354 1/20 0.32
IAPP P10997 1/20 0.32
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
GABRA1 P14867 1/20 0.31
GABRB2 P47870 1/20 0.31
ADRA2A P08913 1/20 0.31
ADRA2B P18089 1/20 0.31
ADRA2C P18825 1/20 0.31
ELANE P08246 1/20 0.31
CTSG P08311 1/20 0.31
PPARD Q03181 1/20 0.31
GPR84 Q9NQS5 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482404 0.89 LIPG (0.44) LIPGALOX5PTGS2IAPPPPARG
SCHEMBL1780725 0.83 LIPG (0.37) LIPGHTR1APRKCIDAOALOX5
SCHEMBL3625912 0.80 LIPG (0.35) LIPGHTR1APRKCIDAOALOX5
SCHEMBL27924053 0.75 LIPG (0.33) LIPGHTR1ADAOPPARGPPARA
SCHEMBL3482512 0.75 LIPG (0.33) LIPGHTR1ADAOPPARGPPARA
SCHEMBL6114355 0.75 LIPG (0.33) LIPGHTR1ADAOGABRA1GABRB2
SCHEMBL21383134 0.75 LIPG (0.33) LIPGHTR1ADAOADRA2AADRA2B
SCHEMBL3482236 0.73 ALDH1A1 (0.35) LIPGHTR1ADAOPPARGPPARA
Hydrogen Peroxide SCHEMBL29092952 0.73 LIPG (0.45) LIPGHTR1ADAOPPARGPPARA
SCHEMBL142479 0.72 ADRA2B (0.44) LIPGHTR1ADAOPPARGPPARA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed