SCHEMBL3482404

SCHEMBL3482404

CCCCc1ccccc1[SiH](O)[SiH3]

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.44
CYP3A4 P08684 1/20 0.41
CYP2D6 P10635 1/20 0.41
CYP2C9 P11712 1/20 0.41
ALOX5 P09917 1/20 0.40
PTGS2 P35354 1/20 0.40
TYR P14679 2/20 0.38
TLR8 Q9NR97 1/20 0.36
BID P55957 3/20 0.35
MCL1 Q07820 3/20 0.35
BCL2L1 Q07817 2/20 0.35
BAK1 Q16611 2/20 0.35
KAT8 Q9H7Z6 2/20 0.35
IAPP P10997 1/20 0.35
PPARG P37231 1/20 0.35
PPARA Q07869 1/20 0.35
EP300 Q09472 1/20 0.35
KAT2A Q92830 1/20 0.35
KAT2B Q92831 1/20 0.35
KAT5 Q92993 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481612 0.89 LIPG (0.35) LIPGALOX5PTGS2IAPPPPARG
SCHEMBL2525305 0.85 LIPG (0.47) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL17785953 0.82 LIPG (0.42) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL13714249 0.79 LIPG (0.44) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL6114399 0.77 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL3482161 0.77 LIPG (0.43) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL3293244 0.76 LIPG (0.42) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL3482697 0.75 LIPG (0.42) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL29520482 0.75 LIPG (0.56) LIPGCYP3A4CYP2D6CYP2C9ALOX5
SCHEMBL245188 0.75 LIPG (0.56) LIPGCYP3A4CYP2D6CYP2C9ALOX5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed