SCHEMBL3481613

SCHEMBL3481613

CCCCCC(C)C(CC)O[SiH3]

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.39
SMPD1 P17405 3/20 0.34
CA1 P00915 2/20 0.33
SPHK1 Q9NYA1 1/20 0.33
TP53 P04637 1/20 0.32
LMNA P02545 1/20 0.32
ADH1B P00325 1/20 0.31
ADH1C P00326 1/20 0.31
ADH1A P07327 1/20 0.31
ADH4 P08319 1/20 0.31
ADH7 P40394 1/20 0.31
DNM1 Q05193 2/20 0.31
PTPN1 P18031 1/20 0.31
ACE2 Q9BYF1 1/20 0.31
FDPS P14324 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481995 0.93 ALDH1A1 (0.33) OPRM1CA1DNM1
SCHEMBL3481905 0.84 METAP1 (0.31)
SCHEMBL3481762 0.79 ALDH1A1 (0.30)
SCHEMBL3482502 0.78 OPRM1 (0.34) OPRM1SMPD1LMNADNM1FDPS
SCHEMBL3481471 0.77 OPRM1 (0.42) OPRM1SMPD1CA1SPHK1TP53
SCHEMBL2769493 0.76
SCHEMBL27626693 0.76 OPRM1 (0.41) OPRM1SMPD1SPHK1LMNAADH1B
SCHEMBL8139612 0.76 OPRM1 (0.41) OPRM1SMPD1SPHK1LMNAADH1B
SCHEMBL27256773 0.75 ALDH1A1 (0.36) OPRM1CA1DNM1FDPS
SCHEMBL4665656 0.73 OPRM1 (0.42) OPRM1SMPD1SPHK1LMNAADH1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed