SCHEMBL3481615

SCHEMBL3481615

CCC[Si](O)([SiH3])c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.34
ESR2 Q92731 2/20 0.34
NR1H2 P55055 2/20 0.32
NR1H3 Q13133 2/20 0.32
KMT2A Q03164 1/20 0.32
TP53 P04637 1/20 0.32
MAPT P10636 1/20 0.32
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
PCSK9 Q8NBP7 1/20 0.31
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
HPGD P15428 1/20 0.31
LMNA P02545 2/20 0.31
NAAA Q02083 1/20 0.31
PTGS2 P35354 1/20 0.31
ATM Q13315 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482407 0.88 PCSK9 (0.37) CES2CES1PCSK9ALDH1A1HPGD
SCHEMBL272865 0.77 ESR1 (0.37) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL271913 0.77 ESR1 (0.37) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL3482130 0.77 ESR1 (0.37) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL28496602 0.77 TP53 (0.35) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL272095 0.76 NR1H2 (0.40) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL272467 0.74 ESR1 (0.34) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL698694 0.74 LMNA (0.32) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL3889886 0.72 NR1H2 (0.50) ESR1ESR2NR1H2NR1H3KMT2A
SCHEMBL10730048 0.72 ESR1 (0.45) ESR1ESR2NR1H2NR1H3KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed