SCHEMBL3481641

SCHEMBL3481641

Cc1ccc([SiH](O)[SiH3])cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 5/20 0.44
TDP1 Q9NUW8 2/20 0.44
ALDH1A1 P00352 7/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
LMNA P02545 3/20 0.36
CA2 P00918 2/20 0.36
CES2 O00748 1/20 0.36
CES1 P23141 1/20 0.36
LPL P06858 1/20 0.36
LIPG Q9Y5X9 1/20 0.36
ORAI1 Q96D31 1/20 0.36
ORAI2 Q96SN7 1/20 0.36
ORAI3 Q9BRQ5 1/20 0.36
TRPV6 Q9H1D0 1/20 0.36
SRD5A2 P31213 1/20 0.36
CA1 P00915 1/20 0.35
CA7 P43166 1/20 0.35
CA9 Q16790 1/20 0.35
TSHR P16473 3/20 0.33
PKM P14618 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8385106 0.77 ACHE (0.50) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL31187417 0.77 ACHE (0.50) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL8384148 0.74 ACHE (0.47) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL3482378 0.72 ACHE (0.38) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL8384038 0.70 ACHE (0.42) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL126082 0.69 ACHE (0.57) ACHETDP1ALDH1A1SMN1; SMN2LMNA
SCHEMBL3481591 0.69 ACHE (0.48) ACHETDP1ALDH1A1SMN1; SMN2LMNA
P-Xylene SCHEMBL9720651 0.67 ACHE (0.80) ACHETDP1ALDH1A1SMN1; SMN2LMNA
P-Xylene SCHEMBL28540852 0.67 ACHE (0.80) ACHETDP1ALDH1A1SMN1; SMN2LMNA
P-Xylene SCHEMBL6272681 0.67 ACHE (0.80) ACHETDP1ALDH1A1SMN1; SMN2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed