SCHEMBL3482378

SCHEMBL3482378

Cc1ccc([SiH](O)[SiH2][SiH3])cc1

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ACHE P22303 4/20 0.38
TDP1 Q9NUW8 1/20 0.38
ALDH1A1 P00352 3/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
SRD5A2 P31213 1/20 0.32
CA2 P00918 2/20 0.32
LMNA P02545 2/20 0.32
CES2 O00748 1/20 0.32
CES1 P23141 1/20 0.32
LPL P06858 1/20 0.32
LIPG Q9Y5X9 1/20 0.32
ORAI1 Q96D31 1/20 0.32
ORAI2 Q96SN7 1/20 0.32
ORAI3 Q9BRQ5 1/20 0.32
TRPV6 Q9H1D0 1/20 0.32
CA1 P00915 1/20 0.31
CA7 P43166 1/20 0.31
CA9 Q16790 1/20 0.31
TSHR P16473 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481653 0.76 CA1 (0.46) ACHETDP1ALDH1A1SMN1; SMN2CA2
SCHEMBL8385917 0.75 ACHE (0.42) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL8380487 0.73 ACHE (0.40) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL3481641 0.72 ACHE (0.44) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL31187417 0.71 ACHE (0.50) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL8385106 0.66 ACHE (0.50) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL126082 0.64 ACHE (0.57) ACHETDP1ALDH1A1SMN1; SMN2CA2
SCHEMBL8384148 0.64 ACHE (0.47) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
SCHEMBL3481591 0.63 ACHE (0.48) ACHETDP1ALDH1A1SMN1; SMN2SRD5A2
P-Xylene SCHEMBL9720651 0.62 ACHE (0.80) ACHETDP1ALDH1A1SMN1; SMN2CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed