SCHEMBL3481658

SCHEMBL3481658

CCCCCC(C)CO[SiH3]

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
OPRM1 P35372 1/20 0.42
ACE2 Q9BYF1 1/20 0.41
CA1 P00915 2/20 0.35
SPHK1 Q9NYA1 1/20 0.35
LMNA P02545 2/20 0.35
TP53 P04637 1/20 0.34
DNM1 Q05193 2/20 0.33
ADH1B P00325 1/20 0.33
ADH1C P00326 1/20 0.33
ADH1A P07327 1/20 0.33
ADH4 P08319 1/20 0.33
ADH7 P40394 1/20 0.33
PRKD3 O94806 1/20 0.33
PRKCG P05129 1/20 0.33
PRKCB P05771 1/20 0.33
PRKCA P17252 1/20 0.33
PRKCH P24723 1/20 0.33
PRKCI P41743 1/20 0.33
PRKCE Q02156 1/20 0.33
PRKCQ Q04759 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4971696 0.98 ACE2 (0.44) OPRM1ACE2SPHK1LMNADNM1
SCHEMBL3481536 0.93
SCHEMBL27626726 0.83 LMNA (0.55) LMNA
SCHEMBL3481642 0.82
SCHEMBL27626686 0.82 DNM1 (0.31) OPRM1ACE2DNM1
SCHEMBL27626705 0.81 LMNA (0.35) LMNA
SCHEMBL9750819 0.80 OPRM1 (0.46) OPRM1ACE2CA1SPHK1LMNA
SCHEMBL28582349 0.79 LMNA (0.33) CA1LMNADNM1
SCHEMBL27626714 0.79 OPRM1 (0.41) OPRM1ACE2CA1SPHK1LMNA
SCHEMBL28675296 0.79 LMNA (0.33) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-0683175-A2 Solid titanium catalyst component for olefin polymerization, process for preparation of the same, olefin polymerization catalyst and process for olefin polymerization MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) 1995-11-22 EP disclosed