SCHEMBL3481701

SCHEMBL3481701

CCCCCc1ccccc1[SiH2]O

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.55
NR1H2 P55055 1/20 0.45
NR1H3 Q13133 1/20 0.45
ALOX5 P09917 2/20 0.45
PTGS2 P35354 1/20 0.45
BID P55957 3/20 0.42
MCL1 Q07820 3/20 0.42
BCL2L1 Q07817 2/20 0.42
BAK1 Q16611 2/20 0.42
KAT8 Q9H7Z6 2/20 0.42
CYP3A4 P08684 2/20 0.42
PPARG P37231 1/20 0.42
PPARA Q07869 1/20 0.42
EP300 Q09472 1/20 0.42
KAT2A Q92830 1/20 0.42
KAT2B Q92831 1/20 0.42
KAT5 Q92993 1/20 0.42
SAE1 Q9UBE0 1/20 0.42
CYP2D6 P10635 1/20 0.42
CYP2C9 P11712 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482049 0.94 CYP3A4 (0.47) LIPGNR1H2NR1H3ALOX5PTGS2
SCHEMBL1918471 0.86 HTR1A (0.40) LIPGCYP3A4PPARGPPARACYP2D6
SCHEMBL3482063 0.81 LIPG (0.50) LIPGNR1H2NR1H3ALOX5PTGS2
SCHEMBL82794 0.79 LIPG (0.65) LIPGNR1H2NR1H3ALOX5PTGS2
SCHEMBL30037094 0.79 LIPG (0.65) LIPGNR1H2NR1H3ALOX5PTGS2
SCHEMBL3482554 0.78 CYP3A4 (0.41) LIPGALOX5PTGS2BIDMCL1
SCHEMBL2524117 0.78 CYP3A4 (0.41) LIPGALOX5PTGS2BIDMCL1
SCHEMBL6114437 0.77 GABRA1 (0.46) MEN1TP53MAPTKMT2A
SCHEMBL18496530 0.77 LIPG (0.69) LIPGNR1H2NR1H3ALOX5PTGS2
SCHEMBL6679764 0.77 LIPG (0.69) LIPGNR1H2NR1H3ALOX5PTGS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12386257-B2 Photosensitive resin composition, method of manufacturing pattern cured film, cured film, interlayer insulating film, cover coat layer, surface protective film, and electronic component HD MICROSYSTEMS, LTD. (JP) 2025-08-12 US disclosed
US-20240240061-A1 RESIN COMPOSITION FOR DICING PROTECTION LAYER AND TREATMENT METHOD FOR SEMICONDUCTOR WAFER RESONAC CORPORATION (JP) 2024-07-18 US disclosed
US-20220276555-A1 Photosensitive Resin Composition, Method Of Manufacturing Pattern Cured Film, Cured Film, Interlayer Insulating Film, Cover Coat Layer, Surface Protective Film, And Electronic Component HD MICROSYSTEMS, LTD. (JP) 2022-09-01 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed