SCHEMBL3482153

SCHEMBL3482153

CCc1ccc([SiH2]OC(CC)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.41
KIF11 P52732 5/20 0.40
MEN1 O00255 2/20 0.37
KMT2A Q03164 2/20 0.37
RAB9A P51151 1/20 0.32
LPL P06858 1/20 0.32
LIPG Q9Y5X9 1/20 0.32
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
ALDH1A1 P00352 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP2A6 P11509 1/20 0.31
KCNN4 O15554 1/20 0.31
LMNA P02545 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703768 0.92 KCNN4 (0.35) ALDH1A1KCNN4LMNA
SCHEMBL3482489 0.82 TP53 (0.42) TP53KIF11MEN1KMT2ARAB9A
SCHEMBL708048 0.80 KCNN4 (0.34) KIF11MEN1KMT2ARAB9AALDH1A1
SCHEMBL3481716 0.77 KCNN4 (0.31) KCNN4LMNA
SCHEMBL3482297 0.74 LPL (0.36) TP53LPLLIPGALDH1A1CYP2A6
SCHEMBL3482167 0.73 LPL (0.39) TP53LPLLIPGALDH1A1CYP2A6
SCHEMBL4281338 0.73 KCNN4 (0.38) KIF11ALDH1A1KCNN4LMNA
SCHEMBL706839 0.73 KCNN4 (0.38) KIF11ALDH1A1KCNN4LMNA
SCHEMBL704048 0.73 KCNN4 (0.38) KIF11ALDH1A1KCNN4LMNA
SCHEMBL4281342 0.72 KCNN4 (0.36) KIF11ALDH1A1KCNN4LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed