SCHEMBL3482679

SCHEMBL3482679

Cc1cc(C)cc([SiH2]OC(C)c2ccccc2)c1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TACR1 P25103 13/20 0.39
ACP3 P15309 1/20 0.38
ACHE P22303 2/20 0.36
LMNA P02545 1/20 0.36
TSHR P16473 1/20 0.36
ALOX12 P18054 1/20 0.36
CACNA1F O60840 1/20 0.35
CACNA1D Q01668 1/20 0.35
CACNA1S Q13698 1/20 0.35
CACNA1C Q13936 1/20 0.35
HCAR2 Q8TDS4 1/20 0.34
SLC6A2 P23975 1/20 0.34
SLC6A4 P31645 1/20 0.34
SLC6A3 Q01959 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481483 0.83 TACR1 (0.40) TACR1ACP3LMNATSHRCACNA1F
SCHEMBL16309500 0.82 HCAR2 (0.39) LMNAHCAR2
SCHEMBL3481761 0.77 TACR1 (0.40) TACR1LMNACACNA1FCACNA1DCACNA1S
SCHEMBL3481898 0.75 TACR1 (0.44) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481891 0.75 TACR1 (0.42) TACR1ACP3CACNA1FCACNA1DCACNA1S
SCHEMBL3482036 0.73 ALDH1A1 (0.33) TSHR
SCHEMBL106499 0.73 ADRA2A (0.43) LMNAHCAR2
SCHEMBL12190647 0.73 IGLV6-57 (0.47) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481721 0.73 IDO1 (0.42) TACR1ACP3SLC6A2SLC6A4SLC6A3
SCHEMBL3481727 0.73 TACR1 (0.39) TACR1LMNACACNA1FCACNA1DCACNA1S

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed