SCHEMBL3481898

SCHEMBL3481898

Cc1cc(C)cc([SiH2]OCC(c2ccccc2)c2ccccc2)c1

nearest known ligand 0.44

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TACR1 P25103 18/20 0.44
CACNA1F O60840 1/20 0.39
CACNA1D Q01668 1/20 0.39
CACNA1S Q13698 1/20 0.39
CACNA1C Q13936 1/20 0.39
SLC6A2 P23975 1/20 0.36
SLC6A4 P31645 1/20 0.36
SLC6A3 Q01959 1/20 0.36
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA9 Q16790 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481727 0.83 TACR1 (0.39) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL15798270 0.81 CA12 (0.41) CA12CA1CA2CA9
SCHEMBL703382 0.81 CA12 (0.41) CA12CA1CA2CA9
SCHEMBL8639541 0.77 CA12 (0.41) CA12CA1CA2CA9
SCHEMBL3481483 0.77 TACR1 (0.40) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3482493 0.75 TACR1 (0.41) TACR1
SCHEMBL3482679 0.75 TACR1 (0.39) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481761 0.75 TACR1 (0.40) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3482498 0.75 TP53 (0.42) CA12CA1CA2CA9
SCHEMBL3482681 0.72 NPC1 (0.39) TACR1CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed