SCHEMBL3481739

SCHEMBL3481739

Cc1cc(C)cc([SiH](C)Cl)c1

nearest known ligand 0.38

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.38
TSHR P16473 1/20 0.38
ACHE P22303 1/20 0.32
TPMT P51580 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482163 0.79 ALDH1A1 (0.40) ALDH1A1TSHRACHETPMT
SCHEMBL23027789 0.75 ALDH1A1 (0.42) ALDH1A1TSHRACHETPMT
SCHEMBL16820306 0.71 ALDH1A1 (0.44) ALDH1A1TSHRACHETPMT
SCHEMBL27952762 0.71 ACHE (0.47) ALDH1A1TSHRACHE
SCHEMBL3482235 0.71 ALDH1A1 (0.43) ALDH1A1TSHRACHETPMT
SCHEMBL27798256 0.70 ALDH1A1 (0.33) ALDH1A1TSHR
Methylamine SCHEMBL28203537 0.69 ALDH1A1 (0.69) ALDH1A1TSHRACHETPMT
SCHEMBL17012261 0.69 ALDH1A1 (0.35) ALDH1A1TSHRACHE
SCHEMBL341533 0.69 ALDH1A1 (0.67) ALDH1A1TSHRACHETPMT
SCHEMBL26115 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed