SCHEMBL3481779

SCHEMBL3481779

Cc1cc(C)cc([Si](Cl)(Cl)c2ccccc2)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.38
LMNA P02545 2/20 0.38
TSHR P16473 1/20 0.38
ALOX12 P18054 1/20 0.38
MAPT P10636 5/20 0.37
ALDH1A1 P00352 4/20 0.37
KMT2A Q03164 4/20 0.37
L3MBTL1 Q9Y468 3/20 0.37
MEN1 O00255 3/20 0.37
HPGD P15428 2/20 0.37
KDM4E B2RXH2 1/20 0.37
TDP1 Q9NUW8 1/20 0.37
TP53 P04637 1/20 0.35
ADORA2A P29274 1/20 0.33
ADORA1 P30542 1/20 0.33
NPC1 O15118 2/20 0.33
RAB9A P51151 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
STAT1 P42224 1/20 0.33
FTO Q9C0B1 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Toluene SCHEMBL28546934 0.83 ACHE (0.58) ACHELMNATSHRALOX12MAPT
SCHEMBL1314356 0.82 MAPT (0.39) ACHELMNATSHRALOX12MAPT
SCHEMBL1314519 0.82 MAPT (0.39) ACHELMNATSHRALOX12MAPT
SCHEMBL3482589 0.81 ACHE (0.48) ACHELMNATSHRALOX12MAPT
SCHEMBL1317182 0.80 MAPT (0.36) ACHELMNATSHRALOX12MAPT
Chloromethane SCHEMBL27870447 0.80 ESR1 (0.39) ACHELMNATSHRALOX12ALDH1A1
SCHEMBL29120692 0.80 TSHR (0.39) ACHELMNATSHRALOX12MAPT
Benzene SCHEMBL28183259 0.80 TSHR (0.39) ACHELMNATSHRALOX12MAPT
SCHEMBL76000 0.80 TSHR (0.39) ACHELMNATSHRALOX12MAPT
Hydrochloric Acid SCHEMBL28179995 0.77 TSHR (0.37) ACHELMNATSHRALOX12MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed