SCHEMBL3481814

SCHEMBL3481814

Cc1ccc(CC(C)(C)O[SiH3])cc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
AGXT P21549 2/20 0.40
IDO1 P14902 1/20 0.39
CYP1A2 P05177 2/20 0.37
CYP2A6 P11509 1/20 0.37
TAAR1 Q96RJ0 1/20 0.37
TSHR P16473 1/20 0.36
ESR1 P03372 1/20 0.35
CHRM2 P08172 1/20 0.35
ACHE P22303 2/20 0.35
TDP1 Q9NUW8 1/20 0.35
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CA9 Q16790 1/20 0.34
HPGD P15428 1/20 0.34
CYP3A4 P08684 2/20 0.33
CYP2D6 P10635 1/20 0.33
CYP2C9 P11712 1/20 0.33
NFKB1 P19838 1/20 0.33
CYP2C19 P33261 1/20 0.33
SLC6A2 P23975 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8953995 0.83 CYP3A4 (0.42) CYP1A2TAAR1TSHRESR1TDP1
SCHEMBL15734420 0.81 LMNA (0.39) AGXTIDO1TAAR1ESR1CHRM2
SCHEMBL313697 0.80 SLC6A2 (0.52) CYP1A2TAAR1TSHRCYP3A4CYP2D6
SCHEMBL3482290 0.79 IDO1 (0.47) AGXTIDO1TAAR1TSHRCHRM2
SCHEMBL15733397 0.78 IDO1 (0.46) IDO1TAAR1ESR1KMT2A
SCHEMBL15738882 0.76 MAOB (0.40) AGXTIDO1TAAR1HPGDLMNA
SCHEMBL28670017 0.76 ALDH1A1 (0.41) CYP1A2TSHRESR1CYP3A4CYP2D6
SCHEMBL3867379 0.75 TSHR (0.38) AGXTIDO1CYP1A2CYP2A6TAAR1
SCHEMBL9249326 0.74 IDO1 (0.48) AGXTIDO1CYP1A2CYP2A6TAAR1
SCHEMBL394340 0.74 ESR1 (0.61) AGXTIDO1CYP1A2CYP2A6TAAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed