SCHEMBL3481837

SCHEMBL3481837

CCCCC(CC)(CO[SiH3])c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 3/20 0.35
SIGMAR1 Q99720 2/20 0.34
LTA4H P09960 2/20 0.33
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33
CTSL P07711 1/20 0.32
CTSB P07858 1/20 0.32
CTSH P09668 1/20 0.32
CTSS P25774 1/20 0.32
CTSK P43235 1/20 0.32
KCNN4 O15554 1/20 0.32
EBP Q15125 1/20 0.32
GAA P10253 1/20 0.31
KMT2A Q03164 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705822 0.93 KIF11 (0.36) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL3481873 0.90 SCN1A (0.33) SIGMAR1KCNN4KMT2AMEN1
SCHEMBL704242 0.86 KCNN4 (0.38) KIF11SIGMAR1KCNN4
SCHEMBL3482216 0.85 LTA4H (0.35) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL25298896 0.84 KIF11 (0.41) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL6696762 0.83 KIF11 (0.38) KIF11KCNN4
SCHEMBL707031 0.82 KCNN4 (0.35) KIF11SIGMAR1ESR1ESR2KCNN4
SCHEMBL702996 0.81 LTA4H (0.37) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL708789 0.81 LTA4H (0.37) KIF11SIGMAR1LTA4HESR1ESR2
SCHEMBL6560515 0.80 KIF11 (0.42) KIF11SIGMAR1LTA4HESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed