SCHEMBL702996

SCHEMBL702996

CCCCC(CCCC)(CCCO[SiH3])c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.37
KIF11 P52732 1/20 0.35
SIGMAR1 Q99720 3/20 0.35
MEN1 O00255 3/20 0.33
ESR1 P03372 1/20 0.33
ESR2 Q92731 1/20 0.33
CYP1A2 P05177 3/20 0.33
CYP2C9 P11712 3/20 0.33
CYP2C19 P33261 3/20 0.33
KMT2A Q03164 2/20 0.33
LMNA P02545 2/20 0.33
CYP3A4 P08684 2/20 0.33
CYP2D6 P10635 2/20 0.33
SCN1A P35498 2/20 0.33
SCN2A Q99250 2/20 0.33
SCN3A Q9NY46 2/20 0.33
TSHR P16473 1/20 0.33
NFKB1 P19838 1/20 0.33
MTOR P42345 1/20 0.33
RAB9A P51151 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706396 0.93 SCN1A (0.35) LTA4HKIF11SIGMAR1MEN1CYP1A2
SCHEMBL708789 0.93 LTA4H (0.37) LTA4HKIF11SIGMAR1MEN1ESR1
SCHEMBL706328 0.88 SIGMAR1 (0.36) LTA4HKIF11SIGMAR1CYP1A2CYP2C9
SCHEMBL3482216 0.87 LTA4H (0.35) LTA4HKIF11SIGMAR1MEN1ESR1
SCHEMBL6560515 0.85 KIF11 (0.42) LTA4HKIF11SIGMAR1MEN1ESR1
SCHEMBL705822 0.84 KIF11 (0.36) LTA4HKIF11SIGMAR1ESR1ESR2
SCHEMBL5425018 0.83 SIGMAR1 (0.41) KIF11SIGMAR1MEN1ESR1ESR2
SCHEMBL5180404 0.83 SIGMAR1 (0.42) LTA4HKIF11SIGMAR1MEN1KMT2A
SCHEMBL708503 0.82 SCN1A (0.37) LTA4HKIF11SIGMAR1MEN1CYP1A2
SCHEMBL3481837 0.81 KIF11 (0.35) LTA4HKIF11SIGMAR1MEN1ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed