SCHEMBL3482498

SCHEMBL3482498

CCc1ccc([SiH2]OCC(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.42
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
CRHBP P24387 1/20 0.37
CRHR2 Q13324 1/20 0.37
CYP19A1 P11511 1/20 0.36
OPRM1 P35372 1/20 0.35
OPRD1 P41143 1/20 0.35
OPRK1 P41145 1/20 0.35
OPRL1 P41146 1/20 0.35
L3MBTL1 Q9Y468 4/20 0.34
ATM Q13315 2/20 0.34
MAPK1 P28482 2/20 0.34
TSHR P16473 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
CA12 O43570 1/20 0.34
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CA9 Q16790 1/20 0.34
ALDH1A1 P00352 3/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703382 0.88 CA12 (0.41) TDP1CA12CA1CA2CA9
SCHEMBL3482165 0.84 CYP19A1 (0.40) TP53PPARGPPARACRHBPCRHR2
SCHEMBL15798270 0.84 CA12 (0.41) TDP1CA12CA1CA2CA9
SCHEMBL3482509 0.79 TP53 (0.45) TP53PPARGPPARACRHBPCRHR2
SCHEMBL3482380 0.78 TP53 (0.43) TP53PPARGPPARACRHBPCRHR2
SCHEMBL3482328 0.77 TP53 (0.52) TP53PPARGPPARAL3MBTL1MAPK1
SCHEMBL3481539 0.77 TP53 (0.42) TP53PPARGPPARACRHBPCRHR2
SCHEMBL8639541 0.76 CA12 (0.41) TDP1CA12CA1CA2CA9
SCHEMBL3481898 0.75 TACR1 (0.44) CA12CA1CA2CA9
SCHEMBL3482384 0.75 TP53 (0.48) TP53PPARGPPARACA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed