SCHEMBL3481939

SCHEMBL3481939

CCCC[SiH](O)CCCc1ccccc1

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 2/20 0.46
SIGMAR1 Q99720 2/20 0.46
ADRA1A P35348 2/20 0.44
SLC6A3 Q01959 2/20 0.44
CHRM2 P08172 1/20 0.44
HTR1A P08908 1/20 0.44
ADRA2A P08913 1/20 0.44
CHRM1 P11229 1/20 0.44
DRD1 P21728 1/20 0.44
SLC6A2 P23975 1/20 0.44
SLC6A4 P31645 1/20 0.44
OPRM1 P35372 1/20 0.44
DRD3 P35462 1/20 0.44
CETP P11597 1/20 0.44
RARB P10826 2/20 0.43
HPGD P15428 2/20 0.43
ALDH1A1 P00352 2/20 0.43
HSD17B10 Q99714 1/20 0.43
HDAC3 O15379 1/20 0.42
MAPK1 P28482 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9745147 0.82 TP53 (0.39) SIGMAR1CETPMAPK1SMN1; SMN2
Butylbenzyl SCHEMBL243911 0.81 ALDH1A1 (0.59) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Butylbenzyl SCHEMBL11606144 0.81 ALDH1A1 (0.59) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Benzene SCHEMBL28857166 0.81 TSHR (0.33) KCNH2ADRA1ASLC6A3CHRM2HTR1A
SCHEMBL3482310 0.81 KCNH2 (0.46) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Butylbenzyl SCHEMBL27552527 0.79 ALDH1A1 (0.57) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Butylbenzyl SCHEMBL16051 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Butylbenzyl SCHEMBL22716183 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
Butylbenzyl SCHEMBL3229215 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2
SCHEMBL3482065 0.78 KCNH2 (0.44) KCNH2SIGMAR1ADRA1ASLC6A3CHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed