SCHEMBL3482310

SCHEMBL3482310

CCCC[SiH](Cl)CCCc1ccccc1

nearest known ligand 0.63

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 2/20 0.46
SIGMAR1 Q99720 4/20 0.46
CHRM2 P08172 1/20 0.44
HTR1A P08908 1/20 0.44
ADRA2A P08913 1/20 0.44
CHRM1 P11229 1/20 0.44
DRD1 P21728 1/20 0.44
SLC6A2 P23975 1/20 0.44
SLC6A4 P31645 1/20 0.44
ADRA1A P35348 1/20 0.44
OPRM1 P35372 1/20 0.44
DRD3 P35462 1/20 0.44
SLC6A3 Q01959 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.41
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
MAOA P21397 1/20 0.41
HSD11B1 P28845 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1315205 0.84 TP53 (0.41) KCNH2SIGMAR1MEN1KMT2A
SCHEMBL3481939 0.81 KCNH2 (0.46) KCNH2SIGMAR1CHRM2HTR1AADRA2A
Butylbenzyl SCHEMBL3229215 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1CHRM2HTR1AADRA2A
Butylbenzyl SCHEMBL16051 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1CHRM2HTR1AADRA2A
Butylbenzyl SCHEMBL22716183 0.79 SIGMAR1 (0.59) KCNH2SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL7866284 0.78 LTA4H (0.33) SIGMAR1L3MBTL1
SCHEMBL3482065 0.78 KCNH2 (0.44) KCNH2SIGMAR1CHRM2HTR1AADRA2A
SCHEMBL523394 0.77 SIGMAR1 (0.48) SIGMAR1ADRA1ASLC6A3L3MBTL1MAOA
SCHEMBL1314832 0.77 DNM1 (0.44) KCNH2SIGMAR1MEN1KMT2A
Butylbenzyl SCHEMBL363180 0.77 SIGMAR1 (0.57) KCNH2SIGMAR1CHRM2HTR1AADRA2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed