SCHEMBL3481952

SCHEMBL3481952

CCCC[Si](CCC)(OCCC)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.37
TSHR P16473 3/20 0.35
MEN1 O00255 2/20 0.35
LMNA P02545 2/20 0.35
KMT2A Q03164 2/20 0.35
L3MBTL1 Q9Y468 2/20 0.35
ALDH1A1 P00352 1/20 0.35
GLA P06280 1/20 0.35
POLB P06746 1/20 0.35
GAA P10253 1/20 0.35
MAPT P10636 1/20 0.35
HPGD P15428 1/20 0.35
CYP1A2 P05177 2/20 0.33
CYP2C9 P11712 2/20 0.33
CYP2C19 P33261 2/20 0.33
CYP2D6 P10635 1/20 0.32
CYP19A1 P11511 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
KCNH3 Q9ULD8 1/20 0.31
MLNR O43193 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708788 0.96 LTA4H (0.39) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL708502 0.93 LMNA (0.36) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL3482212 0.90 LTA4H (0.37) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL702995 0.89 LTA4H (0.43) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL706395 0.89 LTA4H (0.43) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL3481654 0.88 LTA4H (0.34) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL705077 0.87 AR (0.37) LTA4HCYP2D6CYP3A4
SCHEMBL3482249 0.86 LMNA (0.34) LTA4HTSHRMEN1LMNAKMT2A
SCHEMBL705821 0.84 LTA4H (0.36) LTA4HTSHRALDH1A1MAPTCYP1A2
SCHEMBL705492 0.83 NR1H2 (0.33) ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed