SCHEMBL3481654

SCHEMBL3481654

CCCC[Si](CCC)(OCC)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.34
KCNH3 Q9ULD8 1/20 0.32
TSHR P16473 2/20 0.32
PCSK9 Q8NBP7 1/20 0.31
ABCB1 P08183 1/20 0.31
ALDH1A1 P00352 2/20 0.30
MAPT P10636 2/20 0.30
MPO P05164 1/20 0.30
NPSR1 Q6W5P4 1/20 0.30
NAAA Q02083 1/20 0.30
AR P10275 1/20 0.30
MEN1 O00255 1/20 0.30
LMNA P02545 1/20 0.30
GLA P06280 1/20 0.30
POLB P06746 1/20 0.30
GAA P10253 1/20 0.30
HPGD P15428 1/20 0.30
KMT2A Q03164 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
PTGS2 P35354 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705821 0.96 LTA4H (0.36) LTA4HTSHRPCSK9ABCB1ALDH1A1
SCHEMBL707030 0.93 TSHR (0.33) LTA4HTSHRALDH1A1GAAHPGD
SCHEMBL3481833 0.89 LTA4H (0.34) LTA4HTSHRPCSK9ABCB1ALDH1A1
SCHEMBL3481952 0.88 LTA4H (0.37) LTA4HKCNH3TSHRALDH1A1MAPT
SCHEMBL712784 0.87 AR (0.38) AR
SCHEMBL3481868 0.85 TSHR (0.31) LTA4HTSHR
SCHEMBL708788 0.84 LTA4H (0.39) LTA4HTSHRALDH1A1MAPTMEN1
SCHEMBL3482054 0.84 LTA4H (0.35) LTA4HKCNH3TSHRPCSK9ALDH1A1
SCHEMBL706395 0.84 LTA4H (0.43) LTA4HTSHRABCB1ALDH1A1MAPT
SCHEMBL702995 0.84 LTA4H (0.43) LTA4HTSHRABCB1ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed