SCHEMBL3481968

SCHEMBL3481968

CCc1ccc([SiH](O)c2ccccc2)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.54
ALDH1A1 P00352 1/20 0.48
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
LPL P06858 1/20 0.40
LIPG Q9Y5X9 1/20 0.40
CYP2A6 P11509 2/20 0.39
CYP1A2 P05177 1/20 0.39
RAB9A P51151 3/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
POLB P06746 1/20 0.39
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
TAS2R14 Q9NYV8 1/20 0.37
KDM4E B2RXH2 1/20 0.37
NPC1 O15118 1/20 0.37
KIF11 P52732 2/20 0.37
RXRA P19793 1/20 0.37
RXRB P28702 1/20 0.37
TAAR1 Q96RJ0 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27887297 0.82 TP53 (0.59) TP53ALDH1A1MEN1KMT2ALPL
SCHEMBL3481983 0.78 TP53 (0.54) TP53ALDH1A1LPLLIPGCYP2A6
SCHEMBL118540 0.78 TSHR (0.40) ALDH1A1RAB9ASMN1; SMN2POLBKDM4E
SCHEMBL27921577 0.77 ALDH1A1 (0.50) TP53ALDH1A1MEN1KMT2ALPL
Ethylbenzene SCHEMBL10431547 0.77 TP53 (0.74) TP53ALDH1A1MEN1KMT2ALPL
SCHEMBL5596520 0.76 TP53 (0.33) TP53ALDH1A1MEN1KMT2ASMN1; SMN2
Ethylbenzene SCHEMBL216251 0.75 TP53 (0.93) TP53ALDH1A1MEN1KMT2ALPL
Ethylbenzene SCHEMBL27405402 0.75 TP53 (0.93) TP53ALDH1A1MEN1KMT2ALPL
Ethylbenzene SCHEMBL9474534 0.75 TP53 (0.93) TP53ALDH1A1MEN1KMT2ALPL
Ethylbenzene SCHEMBL28056495 0.75 TP53 (0.93) TP53ALDH1A1MEN1KMT2ALPL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed