SCHEMBL3482019

SCHEMBL3482019

Cc1ccc(CC(O[SiH3])(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.42

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 7/20 0.42
MEN1 O00255 4/20 0.41
KMT2A Q03164 4/20 0.41
CYP1A2 P05177 1/20 0.37
CYP2C9 P11712 1/20 0.37
CYP2C19 P33261 1/20 0.37
LMNA P02545 3/20 0.37
POLB P06746 2/20 0.37
SMN1; SMN2 Q16637 3/20 0.36
HRH1 P35367 2/20 0.36
ALDH1A1 P00352 1/20 0.36
XBP1 P17861 1/20 0.36
MAPK1 P28482 1/20 0.36
HTT P42858 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
TSHR P16473 1/20 0.34
ALOX12 P18054 1/20 0.34
ACHE P22303 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3867379 0.91 TSHR (0.38) KIF11KMT2ACYP1A2CYP2C9CYP2C19
SCHEMBL238218 0.87 CYP1A2 (0.48) KIF11CYP1A2CYP2C9CYP2C19LMNA
SCHEMBL1314643 0.75 TAAR1 (0.37) KMT2ALMNAALDH1A1MAPK1
SCHEMBL6682555 0.73 KIF11 (0.50) KIF11MEN1KMT2ACYP1A2CYP2C9
SCHEMBL2238102 0.72 KCNN4 (0.40) KIF11LMNAALDH1A1MAPK1
SCHEMBL29271946 0.72 KIF11 (0.45) KIF11MEN1KMT2ACYP1A2CYP2C9
SCHEMBL8984623 0.72 SLC6A4 (0.44) KIF11MEN1KMT2ACYP1A2CYP2C9
SCHEMBL28274128 0.72 KIF11 (0.45) KIF11MEN1KMT2ACYP1A2CYP2C9
SCHEMBL765190 0.71 CYP1A2 (0.48) KIF11CYP1A2CYP2C9CYP2C19LMNA
SCHEMBL3482515 0.71 KIF11 (0.43) KIF11MEN1KMT2ALMNAALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed