SCHEMBL3482101

SCHEMBL3482101

C=C[Si](CCCC)(OC)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.33
SMN1; SMN2 Q16637 1/20 0.31
TSHR P16473 1/20 0.30
THRA P10827 1/20 0.30
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1596364 0.90 ALDH1A1 (0.31)
SCHEMBL3481545 0.85 LTA4H (0.32) LTA4H
SCHEMBL3482234 0.84 LTA4H (0.34) LTA4H
SCHEMBL14956510 0.82 ALDH1A1 (0.32)
SCHEMBL706929 0.77 LTA4H (0.37) LTA4HSMN1; SMN2TSHR
SCHEMBL18107989 0.75 LTA4H (0.36) LTA4HSMN1; SMN2TSHR
SCHEMBL1594781 0.75
SCHEMBL3922211 0.74 TSHR (0.41) SMN1; SMN2TSHR
SCHEMBL27943213 0.74 NR1H2 (0.33) LTA4HSMN1; SMN2TSHR
SCHEMBL3482054 0.74 LTA4H (0.35) LTA4HTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed