SCHEMBL3482115

SCHEMBL3482115

Cc1cc(C)cc([SiH](Cl)c2ccccc2)c1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.38
TSHR P16473 2/20 0.38
LMNA P02545 1/20 0.38
ALOX12 P18054 1/20 0.38
TPMT P51580 1/20 0.34
TACR1 P25103 5/20 0.33
ALDH1A1 P00352 2/20 0.32
MAPT P10636 1/20 0.32
RXRA P19793 1/20 0.32
RXRB P28702 1/20 0.32
CYP2A6 P11509 2/20 0.31
CYP1A2 P05177 1/20 0.31
NPSR1 Q6W5P4 1/20 0.30
TDP1 Q9NUW8 2/20 0.30
TSPO P30536 1/20 0.30
ADORA2A P29274 1/20 0.30
ADORA1 P30542 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482541 0.81 ACHE (0.48) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL297217 0.80 TSHR (0.39) ACHETSHRLMNAALOX12ALDH1A1
Water SCHEMBL9174447 0.77 TSHR (0.37) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL22830125 0.77 TSHR (0.37) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL24948229 0.76 ACHE (0.41) ACHETSHRLMNAALOX12TPMT
SCHEMBL3481666 0.73 ACHE (0.38) ACHETSHRLMNAALOX12TPMT
SCHEMBL10318708 0.72 ACHE (0.33) ACHETSHRLMNAALOX12TACR1
SCHEMBL1317183 0.71 POLB (0.39) LMNATACR1ALDH1A1NPSR1TSPO
SCHEMBL12817406 0.70 ACHE (0.31) ACHETSHRLMNAALOX12
SCHEMBL3482163 0.69 ALDH1A1 (0.40) ACHETSHRTPMTALDH1A1RXRA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed