SCHEMBL3481666

SCHEMBL3481666

Cc1cc(C)cc([SiH](O)c2ccccc2)c1

nearest known ligand 0.38

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ACHE P22303 2/20 0.38
TSHR P16473 2/20 0.38
LMNA P02545 1/20 0.38
ALOX12 P18054 1/20 0.38
TSPO P30536 1/20 0.37
RXRA P19793 1/20 0.36
RXRB P28702 1/20 0.36
ALDH1A1 P00352 3/20 0.35
TPMT P51580 1/20 0.34
MAPT P10636 1/20 0.32
TACR1 P25103 1/20 0.32
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
CYP1A2 P05177 1/20 0.31
CYP2A6 P11509 1/20 0.31
KDM4E B2RXH2 1/20 0.31
POLB P06746 1/20 0.31
NPSR1 Q6W5P4 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481591 0.81 ACHE (0.48) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL118540 0.80 TSHR (0.40) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL4631055 0.77 TSHR (0.38) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL9622609 0.77 TSHR (0.38) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL6669960 0.77 TSHR (0.38) ACHETSHRLMNAALOX12ALDH1A1
SCHEMBL24948229 0.76 ACHE (0.41) ACHETSHRLMNAALOX12TSPO
SCHEMBL3482115 0.73 ACHE (0.38) ACHETSHRLMNAALOX12TSPO
SCHEMBL5596457 0.71 ALDH1A1 (0.34) TSHRALDH1A1MAPT
SCHEMBL3481692 0.69 ALDH1A1 (0.45) ACHETSHRRXRARXRBALDH1A1
SCHEMBL31187417 0.69 ACHE (0.50) ACHETSHRLMNAALOX12ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed