SCHEMBL3482192

SCHEMBL3482192

CCCCC(=CCO[SiH3])CCCC

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CES1 P23141 2/20 0.33
CES2 O00748 1/20 0.33
ALDH1A1 P00352 1/20 0.31
TP53 P04637 1/20 0.31
CA1 P00915 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482781 0.86 FNTA (0.34)
SCHEMBL3482146 0.78 CES2 (0.31) CES1CES2
SCHEMBL7759893 0.75
SCHEMBL3482189 0.72 EP300 (0.31) CES1CES2ALDH1A1
SCHEMBL31520438 0.72 CES1 (0.41) CES1CES2ALDH1A1TP53CA1
SCHEMBL11358952 0.71 CES1 (0.38) CES1CES2ALDH1A1TP53CA1
SCHEMBL31130683 0.70 CES1 (0.39) CES1CES2ALDH1A1TP53CA1
SCHEMBL7245894 0.70 CES1 (0.39) CES1CES2ALDH1A1TP53CA1
SCHEMBL38749 0.70 ALDH1A1 (0.39) CES1CES2ALDH1A1TP53CA1
SCHEMBL19418925 0.70 CES2 (0.31) CES1CES2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed