Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LPAR2 | Q9HBW0 | 3/20 | 0.32 |
| ▸ | LPAR3 | Q9UBY5 | 3/20 | 0.32 |
| ▸ | LPAR1 | Q92633 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482273 | 0.88 | LPAR3 (0.37) | LPAR2LPAR3LPAR1 | |
| SCHEMBL3482732 | 0.88 | LPAR3 (0.33) | LPAR2LPAR3LPAR1 | |
| SCHEMBL3481537 | 0.83 | — | — | |
| SCHEMBL3481785 | 0.78 | LPAR3 (0.37) | LPAR2LPAR3LPAR1 | |
| SCHEMBL3482182 | 0.77 | — | — | |
| SCHEMBL31326622 | 0.75 | — | — | |
| SCHEMBL707360 | 0.73 | — | — | |
| SCHEMBL3481571 | 0.71 | IDO1 (0.42) | — | |
| SCHEMBL3481969 | 0.71 | — | — | |
| SCHEMBL3482579 | 0.71 | FAAH (0.32) | LPAR3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |