SCHEMBL3482273

SCHEMBL3482273

CCC=CCCCO[SiH2]CCC

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPAR3 Q9UBY5 4/20 0.37
LPAR2 Q9HBW0 3/20 0.37
LPAR1 Q92633 1/20 0.37
ADORA3 P0DMS8 2/20 0.36
NR1I2 O75469 2/20 0.36
PTGS2 P35354 2/20 0.36
PGR P06401 1/20 0.36
PDE4D Q08499 1/20 0.36
ALDH1A1 P00352 5/20 0.34
CYP3A4 P08684 2/20 0.34
ALOX15 P16050 2/20 0.34
HSD17B10 Q99714 2/20 0.34
TDP1 Q9NUW8 2/20 0.34
TSHR P16473 1/20 0.34
F7 P08709 3/20 0.32
CYP19A1 P11511 3/20 0.32
F3 P13726 3/20 0.32
PTGS1 P23219 2/20 0.32
PPARG P37231 2/20 0.32
KMT2A Q03164 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481785 0.90 LPAR3 (0.37) LPAR3LPAR2LPAR1ADORA3NR1I2
SCHEMBL3482429 0.88 LPAR2 (0.32) LPAR3LPAR2LPAR1
SCHEMBL3482579 0.84 FAAH (0.32) LPAR3FAAH
SCHEMBL3482732 0.80 LPAR3 (0.33) LPAR3LPAR2LPAR1
SCHEMBL707612 0.75
SCHEMBL3481503 0.74 FAAH (0.34) LPAR3FAAH
SCHEMBL3482182 0.74
SCHEMBL3481957 0.73 LPAR3 (0.42) LPAR3LPAR2LPAR1ALDH1A1F7
SCHEMBL27387472 0.73 DNM1 (0.37) LPAR3LPAR2LPAR1TSHRKMT2A
SCHEMBL3295356 0.72 ALDH1A1 (0.33) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed