SCHEMBL3482440

SCHEMBL3482440

CCC[SiH](CC)OCc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.41
IDO1 P14902 1/20 0.39
TP53 P04637 1/20 0.38
AGXT P21549 1/20 0.38
ALDH1A1 P00352 3/20 0.37
MAPK1 P28482 2/20 0.36
TDP1 Q9NUW8 2/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
MAPT P10636 1/20 0.36
CETP P11597 3/20 0.36
CYP3A4 P08684 1/20 0.35
NR4A1 P22736 1/20 0.33
NR4A2 P43354 1/20 0.33
NR4A3 Q92570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA9 Q16790 1/20 0.33
MAOB P27338 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703243 0.92 TSHR (0.44) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL3481604 0.89 CETP (0.41) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL704328 0.88 TSHR (0.48) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL27827367 0.85 ALDH1A1 (0.39) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL11418607 0.85 TSHR (0.39) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL3481879 0.81 TDP1 (0.38) IDO1TP53ALDH1A1TDP1CA1
SCHEMBL706931 0.81 CETP (0.42) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL3482264 0.79 IDO1 (0.46) IDO1
SCHEMBL3481498 0.78 TSHR (0.43) TSHRIDO1TP53AGXTALDH1A1
SCHEMBL19809156 0.76 TSHR (0.40) TSHRIDO1TP53AGXTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-B Low-gloss matte auxiliary agent, preparation method thereof and molded body 铨盛聚碳科技股份有限公司 2023-08-29 CN disclosed
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
CN-114085382-A Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof 铨盛聚碳科技股份有限公司 2022-02-25 CN disclosed
CN-109438633-A A kind of organosilicon toughener and its synthetic method with anti-drop effect 广东优科艾迪高分子材料有限公司 2019-03-08 CN disclosed
CN-109337025-A A kind of anti-dripping agent and its synthetic method with toughening effect 广东优科艾迪高分子材料有限公司 2019-02-15 CN disclosed
CN-109320937-A A kind of organic silicon fibre retardant and preparation method thereof based on poroid inorganic matter 铨盛(云浮)新型聚合物有限公司 2019-02-12 CN disclosed
CN-109320772-A A kind of anti-dripping agent and preparation method thereof containing organosilicon and inorganic silicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109320674-A A kind of anti-dripping agent and preparation method thereof containing PTFE and organosilicon 广东优科艾迪高分子材料有限公司 2019-02-12 CN disclosed
CN-109306169-A A kind of hydridization organic matter and the organic silicon fibre retardant of nano silica and preparation method thereof 铨盛(云浮)新型聚合物有限公司 2019-02-05 CN disclosed
CN-109293853-A A kind of organic silicon fibre retardant and preparation method thereof containing epoxy group 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109293856-A A kind of the organosilicon toughener and its synthetic method of polymer overmold nano-inorganic substance 铨盛聚碳科技股份有限公司 2019-02-01 CN disclosed
CN-109233160-A A kind of organic silicon fibre retardant and preparation method thereof containing PTFE and nano silica 铨盛聚碳科技股份有限公司 2019-01-18 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed