SCHEMBL3482479

SCHEMBL3482479

CCc1ccc([Si](C)(C)OC)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 2/20 0.39
TAAR1 Q96RJ0 1/20 0.38
CYP2A6 P11509 1/20 0.37
LPL P06858 1/20 0.37
LIPG Q9Y5X9 1/20 0.37
TDP1 Q9NUW8 4/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
ALDH1A1 P00352 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.34
CA2 P00918 1/20 0.34
TSHR P16473 1/20 0.34
MAPK1 P28482 1/20 0.34
ATM Q13315 1/20 0.34
NOTUM Q6P988 1/20 0.34
TUBB1 Q9H4B7 1/20 0.34
NPC1 O15118 1/20 0.34
HSP90AA1 P07900 1/20 0.34
RAB9A P51151 1/20 0.34
PLAU P00749 1/20 0.33
APOBEC3G Q9HC16 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6746677 0.90 LPL (0.35) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL6751417 0.86 NISCH (0.36) TP53LPLLIPGTDP1L3MBTL1
SCHEMBL676007 0.83 CA12 (0.30) CA2
SCHEMBL3481715 0.82 TP53 (0.39) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL3482171 0.80 TP53 (0.37) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL21667296 0.80 TP53 (0.37) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL1562733 0.79 TP53 (0.40) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL3098802 0.79 TP53 (0.40) TP53TAAR1CYP2A6LPLLIPG
SCHEMBL22024408 0.77
SCHEMBL3482299 0.77 TP53 (0.34) TP53TAAR1CYP2A6LPLLIPG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed