SCHEMBL3482525

SCHEMBL3482525

Cc1ccc(-c2ccccc2[SiH](O)[SiH3])cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
POLB P06746 3/20 0.39
RAB9A P51151 7/20 0.34
NPC1 O15118 6/20 0.34
LMNA P02545 4/20 0.34
MAPT P10636 3/20 0.34
SMN1; SMN2 Q16637 3/20 0.34
TP53 P04637 2/20 0.34
PKM P14618 2/20 0.34
SYK P43405 1/20 0.34
PDK2 Q15119 1/20 0.34
MAPK1 P28482 2/20 0.33
TDP1 Q9NUW8 2/20 0.33
HPGD P15428 2/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33
NR2F2 P24468 1/20 0.33
HTT P42858 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482594 0.76 MEN1 (0.37) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL8036362 0.73 LMNA (0.50) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL3481948 0.73 SYK (0.37) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL3481478 0.70 SYK (0.36) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL15641904 0.70 TSHR (0.43) RAB9ANPC1TDP1HPGDALDH1A1
SCHEMBL29688196 0.69 LMNA (0.53) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL3294988 0.69 LMNA (0.53) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL3482531 0.69 CA12 (0.44) RAB9ANPC1MAPTSMN1; SMN2PKM
SCHEMBL3481556 0.69 SYK (0.38) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL20721749 0.69 ACHE (0.62) MEN1KMT2APOLBNPC1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed