SCHEMBL3481948

SCHEMBL3481948

CO[SiH](OC)c1ccccc1-c1ccc(C)cc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SYK P43405 1/20 0.37
ABL1 P00519 1/20 0.35
ABCB1 P08183 1/20 0.35
BCR P11274 1/20 0.35
MEN1 O00255 4/20 0.35
KMT2A Q03164 4/20 0.35
POLB P06746 3/20 0.35
RAB9A P51151 7/20 0.34
NPC1 O15118 6/20 0.34
LMNA P02545 5/20 0.34
MAPT P10636 4/20 0.34
SMN1; SMN2 Q16637 4/20 0.34
TP53 P04637 2/20 0.34
PKM P14618 2/20 0.34
MAPK1 P28482 4/20 0.33
ALDH1A1 P00352 3/20 0.33
L3MBTL1 Q9Y468 3/20 0.33
KDM4E B2RXH2 2/20 0.33
HPGD P15428 2/20 0.33
HTT P42858 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2493745 0.80 GSTP1 (0.49) ABL1ABCB1BCRRAB9ANPC1
SCHEMBL3481556 0.80 SYK (0.38) SYKMEN1KMT2APOLBRAB9A
SCHEMBL6683476 0.79 ALDH1A1 (0.38) ABL1ABCB1BCRALDH1A1TSHR
SCHEMBL3481478 0.78 SYK (0.36) SYKMEN1KMT2APOLBRAB9A
SCHEMBL3482594 0.76 MEN1 (0.37) SYKMEN1KMT2APOLBRAB9A
SCHEMBL9148449 0.73 CA1 (0.38) POLBRAB9ALMNAMAPTSMN1; SMN2
SCHEMBL8036362 0.73 LMNA (0.50) SYKABL1ABCB1BCRMEN1
SCHEMBL3482525 0.73 MEN1 (0.39) SYKMEN1KMT2APOLBRAB9A
SCHEMBL62975 0.71 ALDH1A1 (0.52) MEN1KMT2APOLBRAB9ANPC1
SCHEMBL64055 0.70 TSHR (0.43) MEN1KMT2ARAB9ANPC1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed