SCHEMBL3482629

SCHEMBL3482629

CCc1ccc([Si](O)(O)c2ccccc2)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.54
ALDH1A1 P00352 3/20 0.43
RAB9A P51151 3/20 0.42
SMN1; SMN2 Q16637 3/20 0.42
POLB P06746 1/20 0.42
MEN1 O00255 1/20 0.41
KMT2A Q03164 1/20 0.41
CYP2A6 P11509 2/20 0.40
LPL P06858 1/20 0.40
LIPG Q9Y5X9 1/20 0.40
LMNA P02545 2/20 0.40
CXCR4 P61073 1/20 0.39
ESR1 P03372 1/20 0.39
ESR2 Q92731 1/20 0.39
CYP1A2 P05177 1/20 0.39
KDM1A O60341 1/20 0.39
NPC1 O15118 1/20 0.38
MAPT P10636 1/20 0.38
MAPK1 P28482 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1686679 0.91 CYP2A6 (0.46) TP53ALDH1A1SMN1; SMN2POLBMEN1
SCHEMBL3482305 0.87 TP53 (0.54) TP53ALDH1A1RAB9ASMN1; SMN2POLB
SCHEMBL17770825 0.82 TP53 (0.59) TP53ALDH1A1RAB9ASMN1; SMN2MEN1
SCHEMBL3482601 0.78 TP53 (0.54) TP53ALDH1A1RAB9ASMN1; SMN2CYP2A6
SCHEMBL3482586 0.78 TP53 (0.54) TP53ALDH1A1RAB9ASMN1; SMN2CYP2A6
SCHEMBL49494 0.78 ESR1 (0.42) ALDH1A1RAB9ASMN1; SMN2POLBLMNA
SCHEMBL10319292 0.77 TP53 (0.52) TP53ALDH1A1RAB9ASMN1; SMN2POLB
SCHEMBL3482401 0.77 LPL (0.46) TP53ALDH1A1RAB9ASMN1; SMN2POLB
SCHEMBL4276199 0.76 ESR1 (0.48) RAB9ASMN1; SMN2LMNAESR1ESR2
SCHEMBL27957204 0.76 ESR1 (0.42) ALDH1A1LMNAESR1ESR2MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed