SCHEMBL3482586

SCHEMBL3482586

CCc1ccc([Si](Cl)(Cl)c2ccccc2)cc1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.54
RAB9A P51151 5/20 0.39
NPC1 O15118 4/20 0.39
SMN1; SMN2 Q16637 3/20 0.39
NFKB1 P19838 1/20 0.39
NFKB2 Q00653 1/20 0.39
RELA Q04206 1/20 0.39
ALDH1A1 P00352 2/20 0.39
CYP1A2 P05177 2/20 0.39
CYP2A6 P11509 2/20 0.39
L3MBTL1 Q9Y468 3/20 0.38
MAPK1 P28482 2/20 0.38
LMNA P02545 2/20 0.38
MAPT P10636 2/20 0.38
TSHR P16473 1/20 0.38
ATM Q13315 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
KDM4E B2RXH2 1/20 0.37
KIF11 P52732 2/20 0.37
TAAR1 Q96RJ0 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482601 0.87 TP53 (0.54) TP53RAB9ANPC1SMN1; SMN2NFKB1
SCHEMBL10319292 0.85 TP53 (0.52) TP53RAB9ANPC1SMN1; SMN2NFKB1
SCHEMBL17770825 0.82 TP53 (0.59) TP53RAB9ANPC1SMN1; SMN2NFKB1
SCHEMBL705847 0.81 ESR1 (0.40) RAB9ANPC1ALDH1A1CYP1A2MAPK1
SCHEMBL9617737 0.80 HSD11B1 (0.50) TP53SMN1; SMN2ALDH1A1LMNAKDM4E
SCHEMBL3482629 0.78 TP53 (0.54) TP53RAB9ANPC1SMN1; SMN2ALDH1A1
SCHEMBL3482305 0.78 TP53 (0.54) TP53RAB9ANPC1SMN1; SMN2ALDH1A1
Chloromethane SCHEMBL27870447 0.78 ESR1 (0.39) TP53RAB9ANPC1ALDH1A1MAPK1
SCHEMBL76000 0.78 TSHR (0.39) RAB9ANPC1ALDH1A1CYP1A2MAPK1
SCHEMBL29120692 0.78 TSHR (0.39) RAB9ANPC1ALDH1A1CYP1A2MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed