SCHEMBL3481810

SCHEMBL3481810

[SiH3]OC(CCCc1ccccc1)Cc1ccccc1

nearest known ligand 0.44

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
SIGMAR1 Q99720 12/20 0.42
IDO1 P14902 1/20 0.41
PPARG P37231 1/20 0.41
PPARA Q07869 1/20 0.41
FKBP1A P62942 1/20 0.40
MAOA P21397 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482080 0.89 SLC6A2 (0.40) SIGMAR1PPARGPPARAMAOA
SCHEMBL3482058 0.82 CTSK (0.43) SIGMAR1PPARG
SCHEMBL3482737 0.82 EPHX1 (0.48) SIGMAR1MAOA
SCHEMBL3481657 0.81 KCNH2 (0.45) SIGMAR1
SCHEMBL3481956 0.80 KCNH2 (0.47) SIGMAR1
SCHEMBL3342120 0.76 SIGMAR1 (0.43) SIGMAR1IDO1
SCHEMBL3482284 0.75 TRPA1 (0.46) SIGMAR1MAOA
SCHEMBL3815515 0.72 MMP12 (0.41) SIGMAR1
SCHEMBL703560 0.71 IDO1 (0.61) SIGMAR1IDO1MAOA
SCHEMBL8634823 0.71 EPHX1 (0.64) SIGMAR1MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed