SCHEMBL3482774

SCHEMBL3482774

CO[SiH](OC)c1cc(C)cc(C)c1

nearest known ligand 0.36

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.36
TSHR P16473 2/20 0.36
ACHE P22303 2/20 0.35
CYP3A4 P08684 1/20 0.32
MAPK1 P28482 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482011 0.76 ALDH1A1 (0.35) ALDH1A1TSHRACHECYP3A4MAPK1
SCHEMBL8762344 0.75 ACHE (0.48) ALDH1A1ACHECYP3A4MAPK1TDP1
SCHEMBL1703269 0.72 ACHE (0.44) ALDH1A1TSHRACHECYP3A4TDP1
SCHEMBL3482040 0.72 ALDH1A1 (0.32) ALDH1A1TSHR
Methoxymethane SCHEMBL27501177 0.71 ALDH1A1 (0.53) ALDH1A1TSHRACHECYP3A4MAPK1
SCHEMBL3482413 0.70 RAPGEF4 (0.36) ALDH1A1ACHE
SCHEMBL16820306 0.69 ALDH1A1 (0.44) ALDH1A1TSHRACHECYP3A4MAPK1
SCHEMBL14366693 0.69 CA12 (0.32)
SCHEMBL3482099 0.69 ALDH1A1 (0.33) ALDH1A1
SCHEMBL3296741 0.69 ALDH1A1 (0.38) ALDH1A1TSHRACHECYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109705352-A A kind of vinyl polysiloxane and its preparation method and application 杭州之江新材料有限公司 2019-05-03 CN claimed
CN-109705352-A A kind of vinyl polysiloxane and its preparation method and application 杭州之江新材料有限公司 2019-05-03 CN disclosed
CN-107880267-A Siloxanes abutting ladder poly-siloxane of siloxane bridge base silane end-blocking and preparation method thereof 长兴(中国)投资有限公司 2018-04-06 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed