SCHEMBL3482413

SCHEMBL3482413

CO[SiH](OC)c1c(C)cc(C)cc1C

nearest known ligand 0.36

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
RAPGEF4 Q8WZA2 3/20 0.36
ACHE P22303 1/20 0.33
FFAR4 Q5NUL3 3/20 0.32
GABRG2 P18507 1/20 0.32
GABRB3 P28472 1/20 0.32
GABRA3 P34903 1/20 0.32
KDM4E B2RXH2 1/20 0.31
ALDH1A1 P00352 1/20 0.31
LMNA P02545 1/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31
CYP1A2 P05177 1/20 0.30
CYP2A6 P11509 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31494229 0.75 TP53 (0.33)
SCHEMBL3482916 0.73 L3MBTL1 (0.34) RAPGEF4KDM4E
SCHEMBL8384863 0.71 RAPGEF4 (0.50) RAPGEF4KDM4EALDH1A1LMNAGAA
SCHEMBL1726231 0.71 RAPGEF4 (0.43) RAPGEF4ACHEKDM4EALDH1A1LMNA
SCHEMBL3296111 0.70 RAPGEF4 (0.38) RAPGEF4KDM4EALDH1A1LMNAGAA
SCHEMBL3482774 0.70 ALDH1A1 (0.36) ACHEALDH1A1
SCHEMBL3482261 0.70 L3MBTL1 (0.33) RAPGEF4FFAR4KDM4EALDH1A1LMNA
SCHEMBL1635401 0.69 RAPGEF4 (0.41) RAPGEF4ACHEKDM4EALDH1A1LMNA
SCHEMBL8380464 0.69 RAPGEF4 (0.41) RAPGEF4ACHEKDM4EALDH1A1LMNA
SCHEMBL29776866 0.69 RAPGEF4 (0.41) RAPGEF4ACHEKDM4EALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed