Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL3626396

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)F.O=S(=O)([O-])C(F)(F)F.c1ccc([S+](c2cccc3ccccc23)c2cccc3ccccc23)cc1.c1ccc([S+](c2cccc3ccccc23)c2cccc3ccccc23)cc1

nearest known ligand 0.33

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Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 1/20 0.33
ELANE P08246 1/20 0.31
PTPN1 P18031 1/20 0.30
RORA P35398 1/20 0.30
RORC P51449 1/20 0.30
NR1H2 P55055 1/20 0.30
NR1H4 Q96RI1 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1593370 0.97 ELANE (0.32) ELANEPTPN1RORARORCNR1H2
Trifluoromethanesulfonic Acid SCHEMBL3626393 0.94 RORA (0.31) RORARORCNR1H2NR1H4
SCHEMBL270055 0.94 ELANE (0.32) ELANEPTPN1RORARORCNR1H2
SCHEMBL3132397 0.91 ELANE (0.32) ELANEPTPN1RORARORCNR1H2
Trifluoromethanesulfonic Acid SCHEMBL36034 0.91 GPR3 (0.38) GPR3PTPN1RORARORCNR1H2
Trifluoromethanesulfonic Acid SCHEMBL31564951 0.91 GPR3 (0.38) GPR3PTPN1RORARORCNR1H2
SCHEMBL3127138 0.90 CA1 (0.32) ELANEPTPN1RORARORCNR1H2
SCHEMBL3139795 0.90 CA1 (0.32) ELANEPTPN1RORARORCNR1H2
Trifluoromethanesulfonic Acid SCHEMBL29402880 0.88 GPR3 (0.38) GPR3PTPN1RORARORCNR1H2
Trifluoromethanesulfonic Acid SCHEMBL547976 0.88 GPR3 (0.38) GPR3PTPN1RORARORCNR1H2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7741009-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-06-22 US disclosed
US-20090023097-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-22 US disclosed