SCHEMBL36498

SCHEMBL36498

Cc1cc(C(c2cc(C)c(O)cc2C)c2ccccc2O)c(C)cc1O

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.47
GABRB2 P47870 1/20 0.47
MAPT P10636 5/20 0.45
PKM P14618 3/20 0.45
CYP3A4 P08684 3/20 0.45
ALOX15 P16050 3/20 0.45
HIF1A Q16665 3/20 0.45
CYP1A2 P05177 2/20 0.45
CYP2D6 P10635 2/20 0.45
CYP2C9 P11712 2/20 0.45
CYP2C19 P33261 2/20 0.45
KDM4E B2RXH2 2/20 0.45
ALDH1A1 P00352 2/20 0.45
HPGD P15428 2/20 0.45
HSD17B10 Q99714 2/20 0.45
G6PD P11413 1/20 0.45
ALOX12 P18054 1/20 0.45
MAPK1 P28482 1/20 0.45
CCR6 P51684 1/20 0.45
NPSR1 Q6W5P4 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29375135 1.00 GABRA1 (0.47) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL5533093 0.89 LMNA (0.39) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL22787080 0.87 LMNA (0.40) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL1397171 0.86 GABRA1 (0.48) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL28647603 0.85 CYP2D6 (0.52) MAPTPKMCYP3A4ALOX15HIF1A
SCHEMBL20808843 0.85 CYP2D6 (0.52) MAPTPKMCYP3A4ALOX15HIF1A
SCHEMBL353293 0.84 GABRA1 (0.57) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL20051988 0.83 GABRA1 (0.50) GABRA1GABRB2MAPTPKMCYP3A4
SCHEMBL20808841 0.83 HTT (0.46) MAPTPKMCYP3A4ALOX15HIF1A
SCHEMBL12964141 0.81 TRPA1 (0.45) GABRA1GABRB2MAPTPKMCYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 812 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8278021-B2 Method of fabricating a thin film transistor substrate and a photosensitive composition used in the thin film transistor substrate SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-10-02 US claimed
US-7879528-B2 For forming pattern that prevents contamination within the exposure apparatus; lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US claimed
EP-2203783-A2 THICK FILM RESISTS AZ Electronic Materials USA Corp. (US) 2010-07-07 EP claimed
WO-2009040661-A2 THICK FILM RESISTS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-04-02 WO claimed
US-20090081589-A1 THICK FILM RESISTS MERCK PATENT GMBH (DE) 2009-03-26 US claimed
US-20090030103-A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR SUBSTRATE AND A PHOTOSENSITIVE COMPOSITION USED IN THE THIN FILM TRANSISTOR SUBSTRATE SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-01-29 US claimed
US-20080176170-A1 RESIST COMPOSITION FOR ELECTRON BEAM OR EUV TOKYO OHKA KOGYO CO., LTD. (JP) 2008-07-24 US claimed
EP-1623274-A2 PHOTORESIST COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2006-02-08 EP claimed
EP-1614005-A2 PHOTORESIST COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2006-01-11 EP claimed
WO-2004088423-A2 PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-10-14 WO claimed
WO-2004088424-A2 PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-10-14 WO claimed
US-20040197696-A1 Photoresist compositions AZ ELECTRONIC MATERIALS USA CORP. 2004-10-07 US claimed
US-20040197704-A1 Photoresist compositions AZ ELECTRONIC MATERIALS USA CORP. 2004-10-07 US claimed
US-6790582-B1 NOVOLAK RESIN PARTIALLY ESTERIFIED WITH NAPHTHOQUINONEDIAZIDOSULFONYL GROUP; DILUTION RESIN(S), AND SOLVENT CLARIANT FINANCE BVI LIMITED (VG) 2004-09-14 US claimed
US-6686120-B2 THERMAL ACID GENERATOR AND A METHOD OF FORMING A PATTERN USING THE SAME. THE PHOTORESIST COMPOSITION INCLUDES ABOUT 100 PARTS BY WEIGHT OF AN ALKALI-SOLUBLE ACRYL COPOLYMER, ABOUT 5-100 PARTS BY WEIGHT OF 1,2-QUINONEDIAZIDE COMPOUND, ABOUT SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-03 US claimed
US-20030134222-A1 Photoresist composition and method of forming pattern using the same SAMSUNG ELECTRONICS CO., LTD. 2003-07-17 US claimed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US claimed
EP-4131622-B1 SEPARATOR FOR LITHIUM SECONDARY BATTERY, METHOD FOR MANUFACTURING SAME, AND LITHIUM SECONDARY BATTERY COMPRISING SAME LG ENERGY SOLUTION LTD (KR) 2026-01-28 EP disclosed
US-5332647-A Photosensitive resins for elements TOKYO OHKA KOGYO CO., LTD. (JP) 1994-07-26 US disclosed
EP-0496640-A1 I-ray sensitive positive resist composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1992-07-29 EP disclosed