Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 1/20 | 0.46 |
| ▸ | CXCR4 | P61073 | 1/20 | 0.42 |
| ▸ | PIM1 | P11309 | 1/20 | 0.41 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.40 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.39 |
| ▸ | HRH1 | P35367 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8088119 | 0.98 | MAPT (0.44) | MAPTCXCR4PIM1SIGMAR1TLR8 | |
| SCHEMBL6960374 | 0.83 | MAPT (0.41) | MAPTCXCR4TLR8TDP1 | |
| SCHEMBL6438296 | 0.82 | POLB (0.57) | MAPTCXCR4TLR8 | |
| SCHEMBL892083 | 0.80 | TLR8 (0.54) | MAPTTLR8TDP1 | |
| SCHEMBL9684955 | 0.80 | MPO (0.50) | MAPTCXCR4TDP1 | |
| SCHEMBL14799694 | 0.80 | TLR8 (0.54) | MAPTTLR8TDP1 | |
| SCHEMBL19138003 | 0.80 | SLC9A1 (0.43) | MAPTCXCR4TLR8TDP1 | |
| SCHEMBL17223973 | 0.80 | CXCR4 (0.38) | MAPTCXCR4TLR8 | |
| SCHEMBL17528648 | 0.80 | TLR8 (0.54) | MAPTTLR8TDP1 | |
| SCHEMBL11325500 | 0.80 | TLR8 (0.54) | MAPTTLR8TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 819 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4643371-A1 | COMPOSITION FOR SELECTIVELY REMOVING OXIDE COMPOUNDS AND ETCHING RESIDUES OF ONE OR BOTH OF CO AND CU | BASF SE (DE) | 2025-11-05 | — | — | EP | claimed |
| US-20250297194-A1 | CLEANING METHOD OF SEMICONDUCTOR DEVICE, CLEANING APPARATUS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CLEANING COMPOSITION | DAXIN MATERIALS CORPORATION (TW) | 2025-09-25 | — | — | US | claimed |
| EP-3774680-B1 | CLEANING COMPOSITIONS | FUJIFILM ELECTRONIC MAT USA INC (US) | 2025-09-24 | — | — | EP | claimed |
| EP-4621829-A1 | CLEANING METHOD OF SEMICONDUCTOR DEVICE, CLEANING APPARATUS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CLEANING COMPOSITION | Daxin Materials Corporation (TW) | 2025-09-24 | — | — | EP | claimed |
| US-12331239-B2 | Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt | BASF SE (DE) | 2025-06-17 | — | — | US | claimed |
| WO-2025108836-A1 | COMPOSITIONS FOR REMOVING PHOTORESIST AND ETCH RESIDUES, METHODS OF USING AND USE THEREOF | MERCK PATENT GMBH (DE) | 2025-05-30 | — | — | WO | claimed |
| US-12187984-B2 | Treatment liquid and method for treating object to be treated | FUJIFILM CORPORATION (JP) | 2025-01-07 | — | — | US | claimed |
| CN-119220353-A | Application of cleaning liquid | 上海新阳半导体材料股份有限公司 | 2024-12-31 | — | — | CN | claimed |
| CN-119220351-A | Application of cleaning liquid | 上海新阳半导体材料股份有限公司 | 2024-12-31 | — | — | CN | claimed |
| CN-119220356-A | Preparation method of cleaning liquid | 上海新阳半导体材料股份有限公司 | 2024-12-31 | — | — | CN | claimed |
| WO-2007044447-A2 | COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-19 | — | — | WO | claimed |
| WO-2007044446-A1 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-19 | — | — | WO | claimed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | claimed |
| WO-2006133249-A2 | INTEGRATED CHEMICAL MECHANICAL POLISHING COMPOSITION AND PROCESS FOR SINGLE PLATEN PROCESSING | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | claimed |
| EP-1730600-A1 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | Advanced Technology Materials, Inc. (US) | 2006-12-13 | — | — | EP | claimed |
| WO-2006127885-A1 | COPPER PASSIVATING POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION AND METHOD OF USE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-11-30 | — | — | WO | claimed |
| WO-2006036368-A2 | COMPOSITION AND PROCESS FOR ASHLESS REMOVAL OF POST-ETCH PHOTORESIST AND/OR BOTTOM ANTI-REFLECTIVE MATERIAL ON A SUBSTRATE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-04-06 | — | — | WO | claimed |
| US-20060063687-A1 | Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate | ADVANCED TECHNOLOGY MATERIALS, INC. | 2006-03-23 | — | — | US | claimed |
| WO-2005085957-A1 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2005-09-15 | — | — | WO | claimed |
| US-20050197265-A1 | Composition including an active cleaning combination selected from a quaternary ammonium base in combination with at least one of alkali and alkaline earth base and a strong base in combination with an oxidant; semiconductors | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2005-09-08 | — | — | US | claimed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12331239-B2 | Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt | STK11, CRKL, STK10 | MAPT 1392/4885CXCR4 3115/4885PIM1 1439/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.