Predicted protein targets (top 19)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC2A1 | P11166 | 2/20 | 0.42 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | CNR1 | P21554 | 3/20 | 0.39 |
| ▸ | CNR2 | P34972 | 3/20 | 0.39 |
| ▸ | MEN1 | O00255 | 2/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.37 |
| ▸ | KCNH2 | Q12809 | 6/20 | 0.36 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | FABP4 | P15090 | 2/20 | 0.35 |
| ▸ | FABP5 | Q01469 | 2/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.34 |
| ▸ | LMNA | P02545 | 1/20 | 0.34 |
| ▸ | TSHR | P16473 | 1/20 | 0.34 |
| ▸ | THRA | P10827 | 1/20 | 0.34 |
| ▸ | THRB | P10828 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL29354733 | 1.00 | SLC2A1 (0.42) | SLC2A1GAATDP1L3MBTL1CNR1 | |
| Trifluoromethanesulfonic Acid SCHEMBL703652 | 0.94 | KMT2A (0.42) | SLC2A1GAATDP1L3MBTL1CNR1 | |
| Trifluoromethanesulfonic Acid SCHEMBL646424 | 0.90 | HTT (0.35) | SLC2A1MEN1KMT2AHTTMCOLN3 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168318 | 0.90 | HTT (0.35) | SLC2A1MEN1KMT2AHTTMCOLN3 | |
| SCHEMBL190939 | 0.90 | SLC2A1 (0.38) | SLC2A1GAATDP1L3MBTL1CNR1 | |
| SCHEMBL29754149 | 0.90 | SLC2A1 (0.38) | SLC2A1GAATDP1L3MBTL1CNR1 | |
| Trifluoromethanesulfonic Acid SCHEMBL36662 | 0.90 | TSHR (0.44) | GAATDP1MEN1KMT2AFABP4 | |
| Trifluoromethanesulfonic Acid SCHEMBL31168250 | 0.90 | TSHR (0.44) | GAATDP1MEN1KMT2AFABP4 | |
| Trifluoromethanesulfonic Acid SCHEMBL5972623 | 0.89 | ALDH1A1 (0.35) | SLC2A1GAAMEN1KMT2AHTT | |
| SCHEMBL448402 | 0.89 | SLC2A1 (0.37) | SLC2A1GAATDP1L3MBTL1CNR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 719 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2026-05-19 | — | — | US | disclosed |
| US-12624392-B2 | Molecular array generation using photoresist | 10X GENOMICS, INC. (US) | 2026-05-12 | — | — | US | disclosed |
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | JSR CORPORATION (JP) | 2026-03-10 | — | — | US | disclosed |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2026-02-24 | — | — | US | disclosed |
| US-12393115-B2 | Positive working photosensitive material | MERCK PATENT GMBH (DE) | 2025-08-19 | — | — | US | disclosed |
| US-12386260-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | JSR CORPORATION (JP) | 2025-08-12 | — | — | US | disclosed |
| US-20250244667-A1 | COMPOSITION | MERCK PATENT GMBH (DE) | 2025-07-31 | — | — | US | disclosed |
| US-20250199403-A1 | COMPOSITION INCLUDING ALKALINE-SOLUBLE POLYMER AND COLORANT | MERCK ELECTRONICS KGAA (DE) | 2025-06-19 | — | — | US | disclosed |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | JSR CORPORATION (JP) | 2025-04-01 | — | — | US | disclosed |
| EP-4516394-A2 | HIGH DEFINITION MOLECULAR ARRAY FEATURE GENERATION USING PHOTORESIST | 10x Genomics, Inc. (US) | 2025-03-05 | — | — | EP | disclosed |
| US-20020132181-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-09-19 | — | — | US | disclosed |
| EP-1231205-A1 | VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS | JSR Corporation (JP) | 2002-08-14 | — | — | EP | disclosed |
| EP-1225480-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-07-24 | — | — | EP | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-6322949-B2 | SULFONIUM COMPOUND AS PHOTOACID GENERATOR | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-11-27 | — | — | US | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12631962-B2 | Resist composition and method for forming resist pattern | TERB1, TERF2, LSM8 | SLC2A1 3348/4885GAA 4148/4885TDP1 2306/4885 |
| US-12572075-B2 | Composition, method of forming resist underlayer film, and method of forming resist pattern | TOP1, NAF1, ASH2L | SLC2A1 2211/4885GAA 4711/4885TDP1 2490/4885 |
| US-12624392-B2 | Molecular array generation using photoresist | POLL, LIG4, LIG3 | SLC2A1 4470/4885GAA 3363/4885TDP1 326/4885 |
| US-12265333-B2 | Composition, resist underlayer film, method of forming resist underlayer film, method of producing patterned substrate, and compound | TOP1, RER1, ABCC1 | SLC2A1 2313/4885GAA 4774/4885TDP1 2908/4885 |
| US-12560866-B2 | Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound | RAD51, RER1, RAD1 | SLC2A1 3218/4885GAA 3515/4885TDP1 1021/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.