SCHEMBL368635

SCHEMBL368635

CC(C)(CCC(C)(C)OC(=O)O)OC(=O)O.C[Si](C)(C)C

nearest known ligand 0.34

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.34
FFAR1 O14842 1/20 0.30
CPT2 P23786 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28187342 0.83 ALDH1A1 (0.48) GAA
SCHEMBL28375445 0.80 GAA (0.34) GAAFFAR1CPT2TDP1
SCHEMBL609525 0.80 LMNA (0.39) GAAFFAR1CPT2TDP1
Hydrochloric Acid SCHEMBL11627695 0.78 LMNA (0.38) GAA
SCHEMBL1964653 0.78 GAA (0.33) GAA
SCHEMBL6136823 0.78 GAA (0.33) GAA
SCHEMBL33483 0.76 GAA (0.32) GAA
SCHEMBL13885738 0.76 ALDH1A1 (0.35) GAA
SCHEMBL608106 0.76 CA2 (0.36) FFAR1TDP1
Hydrochloric Acid SCHEMBL27819113 0.76 KDM4E (0.37) GAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8097402-B2 Using electric-field directed post-exposure bake for double-patterning (D-P) TOKYO ELECTRON LIMITED (JP) 2012-01-17 US disclosed
WO-2010114716-A1 USING ELECTRIC-FIELD DIRECTED POST-EXPOSURE BAKE FOR DOUBLE PATTERNING (D-P) TOKYO ELECTRON LIMITED (JP) 2010-10-07 WO disclosed
US-20100248152-A1 Using Electric-Field Directed Post-Exposure Bake for Double-Patterning (D-P) TOKYO ELECTRON LIMITED (JP) 2010-09-30 US disclosed
US-7763404-B2 Methods and apparatus for changing the optical properties of resists TOKYO ELECTRON LIMITED (JP) 2010-07-27 US disclosed
US-7555395-B2 Methods and apparatus for using an optically tunable soft mask to create a profile library TOKYO ELECTRON LIMITED (JP) 2009-06-30 US disclosed
US-20080077362-A1 METHODS AND APPARATUS FOR USING AN OPTICALLY TUNABLE SOFT MASK TO CREATE A PROFILE LIBRARY TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-20080074678-A1 ACCURACY OF OPTICAL METROLOGY MEASUREMENTS TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-20080074677-A1 ACCURACY OF OPTICAL METROLOGY MEASUREMENTS TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-20080076045-A1 METHODS AND APPARATUS FOR CHANGING THE OPTICAL PROPERTIES OF RESISTS TOKYO ELECTRON LIMITED (JP) 2008-03-27 US disclosed
US-7300730-B1 Creating an optically tunable anti-reflective coating TOKYO ELECTRON LIMITED (JP) 2007-11-27 US disclosed
US-6770418-B2 ACID-CATALYZED POSITIVE RESIST COMPOSITIONS SUITABLE FOR BILAYER OR MULTILAYER LITHOGRAPHIC APPLICATIONS ARE ENABLED BY THE USE OF A COMBINATION OF (A) AN ACID-SENSITIVE IMAGING POLYMER, (B) A RADIATION SENSITIVE ACID GENERATOR, AND (C) A INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-08-03 US disclosed
US-20030124453-A1 Positive resist compositions containing non-polymeric silicon aditives INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2003-07-03 US disclosed